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| Artikelnr.:
2949E-2172598 Fabrikantnr.:
IRF3805STRLPBF EAN/GTIN:
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| The Infineon HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead free Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 210 A | Maximum Drain Source Voltage: | 55 V | Package Type: | D2PAK (TO-263) | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 3.3 mO | Maximum Gate Threshold Voltage: | 4V | Number of Elements per Chip: | 1 |
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