irf3805strlpbf  (9 artikelen gevonden)

The Infineon HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operatin...

Channel Type = N Maximum Continuous Drain Current = 210 A Maximum Drain Source Voltage = 55 V Package Type = D2PAK (TO-263) Mounting Type = Surface Mount Pin Count = 3 Maximum Drain Source Resistan...

Producent: INFINEON TECHNOLOGIES Montage: SMD Behuizing: D2PAK Spanning dren-bron: 55V Drainstroom: 110A Type transistor: N-MOSFET Vermogensdissipatie: 200W Polarisatie: unipolair Soort verpakking:...

Product Name=MOSFET,Type=IRF2805STRLPBF,AAN-weerstand (Rds(aan))=4.7 mΩ,Afvoerbron-spanning (Vds)=55 V,Bedrijfstemperatuur max.=175 °C,Bedrijfstemperatuur min.=-55 °C,Continu afvoerstroom (ID)=135 ...

This Infineon HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operatin...

Channel Type = N Maximum Continuous Drain Current = 240 A Maximum Drain Source Voltage = 55 V Package Type = D2PAK-7 Mounting Type = Surface Mount Pin Count = 7 Maximum Drain Source Resistance = 0....

Producent: INFINEON TECHNOLOGIES Montage: SMD Behuizing: D2PAK Spanning dren-bron: 55V Drainstroom: 78A Weerstand in geleidingstoestand: 6,5mΩ Type transistor: N-MOSFET Vermogensdissipatie: 170W Po...

Channel Type = N Maximum Continuous Drain Current = 110 A Maximum Drain Source Voltage = 55 V Series = HEXFET Mounting Type = Surface Mount Pin Count = 3 Maximum Drain Source Resistance = 0.0065 Ω ...

N-Channel Power MOSFET 60V to 80V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address ...