The Infineon offers a wide range of 20V-40V N-channel automotive qualified power MOSFETs using the new OptiMOS technology in a variety of packages to meet a range of needs and achieving RDS(on) dow...
Channel Type = N Maximum Continuous Drain Current = 42 A Maximum Drain Source Voltage = 55 V Package Type = DPAK (TO-252) Mounting Type = Surface Mount Pin Count = 3 Maximum Drain Source Resistance...
The Infineon Strong IRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. Th...
The Infineon OptiMOS N-channel power MOSFETs are developed to increase efficiency, power density and cost-effectiveness. Designed for high performance applications and optimized for high switching ...
Channel Type = N Maximum Continuous Drain Current = 86 A Maximum Drain Source Voltage = 30 V Package Type = DPAK (TO-252) Mounting Type = Surface Mount Pin Count = 3 Maximum Drain Source Resistance...
Channel Type = N Maximum Continuous Drain Current = 5.4 A Maximum Drain Source Voltage = 100 V Package Type = SO-8 Mounting Type = Surface Mount Pin Count = 8 Maximum Drain Source Resistance = 0.03...
The Infineons OptiMOS N-channel power MOSFETs are developed to increase efficiency, power density and cost-effectiveness. Designed for high performance applications and optimized for high switching...
The Infineons OptiMOS N-channel power MOSFETs are developed to increase efficiency, power density and cost-effectiveness. Designed for high performance applications and optimized for high switching...
Channel Type = N Maximum Continuous Drain Current = 5.1 A Maximum Drain Source Voltage = 55 V Series = HEXFET Mounting Type = Surface Mount Pin Count = 8 Maximum Drain Source Resistance = 0.5 Ω Max...
Channel Type = N Maximum Continuous Drain Current = 62 A Maximum Drain Source Voltage = 55 V Package Type = DPAK (TO-252) Mounting Type = Surface Mount Pin Count = 3 Maximum Drain Source Resistance...
The Infineon HEXFET Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are 175°C junction operating ...
The Infineon Strong IRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. Th...