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| Artikelnr.:
2949E-2207496 Fabrikantnr.:
IRFR3709ZTRLPBF EAN/GTIN:
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| The Infineons OptiMOS N-channel power MOSFETs are developed to increase efficiency, power density and cost-effectiveness. Designed for high performance applications and optimized for high switching frequency, OptiMOS products convince with the industrys best figure of merit. The OptiMOS power MOSFET portfolio, now complemented by Strong IRFET, creates a truly powerful combination. Benefit from a perfect match of robust and excellent price/performance of Strong IRFET MOSFETs and best-in-class technology of OptiMOS MOSFETs. Both product families answer to the highest quality standards and performance demands. The joint portfolio, covering voltages from 12V up to 300V MOSFETs, can address a broad range of needs from low to high switching frequencies such as SMPS, battery powered applications, motor control and drives, inverters, and computing.Industry-leading quality Low RDS(ON) at 4.5V VGS Fully Characterized Avalanche Voltage and Current Ultra-Low Gate Impedance Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 86 A | Maximum Drain Source Voltage: | 30 V | Package Type: | DPAK (TO-252) | Series: | HEXFET | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.0065 O | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 20V | Number of Elements per Chip: | 2 |
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| Andere zoekwoorden: dual transistor, 2207496, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IRFR3709ZTRLPBF |
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