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| Artikelnr.:
5695-4168760 Fabrikantnr.:
BSM600D12P4G103 EAN/GTIN:
geen gegevens |
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| Rds(on) Test Voltage - Drain Source On State Resistance - Product Range - No. of Pins 11 Pins MOSFET Module Configuration Half Bridge Channel Type Dual N Channel Transistor Case Style Module Continuous Drain Current Id 567 A Operating Temperature Max 150 °C Drain Source Voltage Vds 1.2 kV Power Dissipation 1.78 kW Gate Source Threshold Voltage Max 4.8 V SVHC No SVHC (17-Jan-2023) |
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| Andere zoekwoorden: (SiC), Carbide, Discretes, FETs, Modules, MOSFETs, Semiconductors, Silicon, ROHM, BSM600D12P4G103, 4168760, 416-8760 |
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