ONSEMI NVH4L060N090SC1 SILICON CARBIDE MOSFET, N CHANNEL, 900 V

Rds(on) Test Voltage 15 V Drain Source On State Resistance 0.084 ohm Product Range - MSL - No. of Pins 4 Pins MOSFET Module Configuration Single Channel Type N Channel Continuous Drain Current Id 46 A Operating Temperature Max 175 °C Transistor Case Style TO-247 Drain Source Voltage Vds 900 V Power Dissipation 221 W Gate Source Threshold Voltage Max 4.3 V SVHC Lead (14-Jun-2023)