ROHM BSM600D12P3G001 SIC MOSFET, DUAL N CHANNEL, 1.2KV, 600A

Rds(on) Test Voltage - Drain Source On State Resistance - Product Range - No. of Pins - MOSFET Module Configuration Half Bridge Channel Type Dual N Channel Continuous Drain Current Id 600 A Operating Temperature Max 150 °C Transistor Case Style Module Drain Source Voltage Vds 1.2 kV Power Dissipation 2.45 kW Gate Source Threshold Voltage Max 5.6 V SVHC Lead (17-Jan-2023)