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| Artikelnr.: 5695-3573215 Fabrikantnr.: BSM080D12P2C008 EAN/GTIN: geen gegevens |
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| Rds(on) Test Voltage - Drain Source On State Resistance - Product Range - No. of Pins - MOSFET Module Configuration Half Bridge Channel Type Dual N Channel Continuous Drain Current Id 80 A Operating Temperature Max 150 °C Transistor Case Style Module Drain Source Voltage Vds 1.2 kV Power Dissipation 600 W Gate Source Threshold Voltage Max 4 V SVHC Lead (17-Jan-2023) |
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| Andere zoekwoorden: (SiC), Carbide, Discretes, FETs, Modules, MOSFETs, Semiconductors, Silicon, ROHM, BSM080D12P2C008, 3573215, 357-3215 |
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