IXYS SEMICONDUCTOR IXFH10N80P MOSFET, N-CH, 800V, 10A, TO-247

Rds(on) Test Voltage 10 V Drain Source On State Resistance 1.1 ohm Product Range Polar HiPerFET No. of Pins 3 Pins Transistor Mounting Through Hole Channel Type N Channel Continuous Drain Current Id 10 A Operating Temperature Max 150 °C Transistor Case Style TO-247 Drain Source Voltage Vds 800 V Power Dissipation 300 W Qualification - Gate Source Threshold Voltage Max 5.5 V SVHC No SVHC (17-Jan-2023)