VISHAY SIHP24N80AE-GE3 MOSFET, N-CH, 800V, 21A, 150DEG C, 208W

Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.16 ohm Product Range E MSL MSL 1 - Unlimited No. of Pins 3 Pins Transistor Mounting Through Hole Channel Type N Channel Continuous Drain Current Id 21 A Operating Temperature Max 150 °C Transistor Case Style TO-220AB Drain Source Voltage Vds 800 V Power Dissipation 208 W Qualification - Gate Source Threshold Voltage Max 4 V SVHC Lead (19-Jan-2021)