VISHAY SISS05DN-T1-GE3 MOSFET, P-CH, -30V, -108A, 65.7W

Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.0028 ohm Product Range TrenchFET MSL MSL 1 - Unlimited No. of Pins 8 Pins Transistor Mounting Surface Mount Channel Type P Channel Continuous Drain Current Id 108 A Operating Temperature Max 150 °C Transistor Case Style PowerPAK 1212 Drain Source Voltage Vds 30 V Power Dissipation 65.7 W Qualification - Gate Source Threshold Voltage Max 2.2 V SVHC Lead (10-Jun-2022)