VISHAY SIHB22N60EF-GE3 MOSFET, N-CH, 600V, 19A, 150DEG C, 179W

Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.158 ohm Product Range EF MSL MSL 1 - Unlimited No. of Pins 3 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 19 A Operating Temperature Max 150 °C Transistor Case Style TO-263 (D2PAK) Drain Source Voltage Vds 600 V Power Dissipation 179 W Qualification - Gate Source Threshold Voltage Max 4 V SVHC Lead (19-Jan-2021)