VISHAY SISS22DN-T1-GE3 MOSFET, N-CH, 60V, 90.6A, 65.7W

Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.00325 ohm Product Range TrenchFET Gen IV MSL MSL 1 - Unlimited No. of Pins 8 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 90.6 A Operating Temperature Max 150 °C Transistor Case Style PowerPAK 1212 Drain Source Voltage Vds 60 V Power Dissipation 65.7 W Qualification - Gate Source Threshold Voltage Max 3.6 V SVHC Lead (10-Jun-2022)