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| Artikelnr.:
2949E-8986864 Fabrikantnr.:
SPD30P06P G EAN/GTIN:
5059043736815 |
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| Infineon SIPMOS® P-Channel MOSFETs. The Infineon SIPMOS ;sup>® ;/sup> small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.. · AEC Q101 Qualified (Please refer to datasheet) · Pb-free lead plating, RoHS compliant Meer informatie: | | Channel Type: | P | Maximum Continuous Drain Current: | 30 A | Maximum Drain Source Voltage: | 60 V | Package Type: | DPAK (TO-252) | Series: | SIPMOS | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 75 mΩ | Channel Mode: | Enhancement | Maximum Power Dissipation: | 125 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -20 V, +20 V | Length: | 6.73mm | Maximum Operating Temperature: | +175 °C | Number of Elements per Chip: | 1 |
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| Andere zoekwoorden: 8986864, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, SPD30P06PG |
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