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| Artikelnr.:
2949E-8181302 Fabrikantnr.:
SI4909DY-T1-GE3 EAN/GTIN:
5059040808379 |
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| Dual P-Channel MOSFET, Vishay Semiconductor Meer informatie: | | Channel Type: | P | Maximum Continuous Drain Current: | 6.5 A | Maximum Drain Source Voltage: | 40 V | Package Type: | SOIC | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 34 mΩ | Channel Mode: | Enhancement | Minimum Gate Threshold Voltage: | 1.2V | Maximum Power Dissipation: | 3.2 W | Transistor Configuration: | Isolated | Maximum Gate Source Voltage: | -20 V, +20 V | Length: | 5mm | Maximum Operating Temperature: | +150 °C | Number of Elements per Chip: | 2 |
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| Andere zoekwoorden: 8181302, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SI4909DYT1GE3 |
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