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| Artikelnr.:
2949E-8141213 Fabrikantnr.:
SIA449DJ-T1-GE3 EAN/GTIN:
5059040742420 |
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| P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor Meer informatie: | | Channel Type: | P | Maximum Continuous Drain Current: | 10.4 A | Maximum Drain Source Voltage: | 30 V | Package Type: | SOT-363 | Series: | TrenchFET | Mounting Type: | Surface Mount | Pin Count: | 6 | Maximum Drain Source Resistance: | 38 mΩ | Channel Mode: | Enhancement | Minimum Gate Threshold Voltage: | 0.6V | Maximum Power Dissipation: | 19 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -12 V, +12 V | Length: | 2.15mm | Maximum Operating Temperature: | +150 °C |
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| Andere zoekwoorden: 8141213, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SIA449DJT1GE3 |
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