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| Artikelnr.:
2949E-8063630 Fabrikantnr.:
FDS3890 EAN/GTIN:
5059042655711 |
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| PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor. ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies. The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET. Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 4.7 A | Maximum Drain Source Voltage: | 80 V | Package Type: | SOIC | Series: | PowerTrench | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 82 mΩ | Channel Mode: | Enhancement | Minimum Gate Threshold Voltage: | 2V | Maximum Power Dissipation: | 1.6 W, 2 W | Transistor Configuration: | Isolated | Maximum Gate Source Voltage: | -20 V, +20 V | Length: | 4.9mm | Maximum Operating Temperature: | +175 °C |
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| Andere zoekwoorden: MOSFET, MOSFET-transistor, 8063630, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, FDS3890 |
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