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| Artikelnr.:
2949E-8047596 Fabrikantnr.:
IXFN110N60P3 EAN/GTIN:
5059041488709 |
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| N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series. A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 90 A | Maximum Drain Source Voltage: | 600 V | Package Type: | SOT-227 | Series: | HiperFET, Polar3 | Mounting Type: | Screw Mount | Pin Count: | 4 | Maximum Drain Source Resistance: | 56 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 5V | Maximum Power Dissipation: | 1.5 kW | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -30 V, +30 V | Length: | 38.23mm | Maximum Operating Temperature: | +150 °C |
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| Andere zoekwoorden: mosfet 600v, 8047596, Semiconductors, Discrete Semiconductors, MOSFETs, IXYS, IXFN110N60P3 |
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