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| Artikelnr.:
2949E-5181687 Fabrikantnr.:
PBSS4350X EAN/GTIN:
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| Low Saturation Voltage NPN Transistors. A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications. Meer informatie: | | Transistor Type: | NPN | Maximum DC Collector Current: | 3 A | Maximum Collector Emitter Voltage: | 50 V | Package Type: | UPAK | Mounting Type: | Surface Mount | Maximum Power Dissipation: | 1.6 W | Minimum DC Current Gain: | 300 | Transistor Configuration: | Single | Maximum Collector Base Voltage: | 50 V | Maximum Emitter Base Voltage: | 5 V | Maximum Operating Frequency: | 100 MHz | Pin Count: | 4 | Number of Elements per Chip: | 1 | Dimensions: | 1.6 x 4.6 x 2.6mm | Maximum Operating Temperature: | +150 °C |
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| Andere zoekwoorden: Transistors, npn transistor, 5181687, Semiconductors, Discrete Semiconductors, Bipolar Transistors, Nexperia, PBSS4350X |
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