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| Artikelnr.:
2949E-2732757 Fabrikantnr.:
IKB30N65EH5ATMA1 EAN/GTIN:
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| Maximum Continuous Collector Current = 30 A
Maximum Collector Emitter Voltage = 650 V
Maximum Gate Emitter Voltage = ±20 V, ±30V
Maximum Power Dissipation = 188 W
Package Type = TO-263
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3 Meer informatie: | | Maximum Continuous Collector Current: | 30 A | Maximum Collector Emitter Voltage: | 650 V | Maximum Gate Emitter Voltage: | ±20 V, ±30V | Maximum Power Dissipation: | 188 W | Number of Transistors: | 1 | Package Type: | TO-263 | Mounting Type: | Through Hole | Channel Type: | N | Pin Count: | 3 |
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| Andere zoekwoorden: Transistors, 2732757, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, IKB30N65EH5ATMA1 |
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