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| Artikelnr.: 2949E-2688289 Fabrikantnr.: SIHB080N60E-GE3 EAN/GTIN: geen gegevens |
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![](/p.gif) | Channel Type = N Maximum Continuous Drain Current = 35 A Maximum Drain Source Voltage = 600 V Package Type = TO-263 Mounting Type = Surface Mount Pin Count = 3 Channel Mode = Enhancement Number of Elements per Chip = 2 Meer informatie: ![](/p.gif) | ![](/p.gif) | Channel Type: | N | Maximum Continuous Drain Current: | 35 A | Maximum Drain Source Voltage: | 600 V | Package Type: | TO-263 | Mounting Type: | Surface Mount | Pin Count: | 3 | Channel Mode: | Enhancement | Number of Elements per Chip: | 2 | Transistor Material: | Silicon |
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![](/p.gif) | Andere zoekwoorden: 2688289, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SIHB080N60EGE3 |
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