|  |
| |
| Artikelnr.:
2949E-2533509 Fabrikantnr.:
BIDW50N65T EAN/GTIN:
geen gegevens |
| |
|
| | |
| Maximum Continuous Collector Current = 50 A
Maximum Collector Emitter Voltage = 650 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 416 W
Package Type = TO-247 Meer informatie: | | Maximum Continuous Collector Current: | 50 A | Maximum Collector Emitter Voltage: | 650 V | Maximum Gate Emitter Voltage: | ±20V | Maximum Power Dissipation: | 416 W | Number of Transistors: | 1 | Configuration: | Single Diode | Package Type: | TO-247 |
|
| | |
| | | |
| Andere zoekwoorden: Transistors, 2533509, Semiconductors, Discrete Semiconductors, IGBTs, Bourns, BIDW50N65T |
| | |
| |