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| Artikelnr.:
2949E-2352687 Fabrikantnr.:
R6507KND3TL1 EAN/GTIN:
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| Channel Type = N
Maximum Continuous Drain Current = 7 A
Maximum Drain Source Voltage = 650 V
Package Type = DPAK (TO-252)
Mounting Type = Surface Mount
Pin Count = 3
Maximum Drain Source Resistance = 0.665 Ω
Channel Mode = Enhancement
Maximum Gate Threshold Voltage = 4V
Number of Elements per Chip = 1 Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 7 A | Maximum Drain Source Voltage: | 650 V | Package Type: | DPAK (TO-252) | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.665 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4V | Number of Elements per Chip: | 1 |
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| Andere zoekwoorden: 2352687, Semiconductors, Discrete Semiconductors, MOSFETs, ROHM, R6507KND3TL1 |
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