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| Artikelnr.:
2949E-2282842 Fabrikantnr.:
SIHB120N60E-T1-GE3 EAN/GTIN:
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| Channel Type = N
Maximum Continuous Drain Current = 25 A
Maximum Drain Source Voltage = 650 V
Series = E Series
Mounting Type = Surface Mount
Pin Count = 3
Maximum Drain Source Resistance = 0.12 Ω
Channel Mode = Enhancement
Maximum Gate Threshold Voltage = 5V
Number of Elements per Chip = 2 Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 25 A | Maximum Drain Source Voltage: | 650 V | Package Type: | D2PAK (TO-263) | Series: | E Series | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.12 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 5V | Number of Elements per Chip: | 2 | Transistor Material: | Si |
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| Andere zoekwoorden: 2282842, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SIHB120N60ET1GE3 |
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