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| Artikelnr.:
2949E-2266059 Fabrikantnr.:
FP25R12W2T7B11BPSA1 EAN/GTIN:
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| The Infineon 25 A PIM IGBT module has compact design and used PRESSFIT contact technology. It has low on state voltage VCEsat.Overload operation up to 175°C 2.5 kV AC 1min insulation Al2O3 substrate with low thermal resistance Meer informatie: | | Maximum Continuous Collector Current: | 25 A | Maximum Collector Emitter Voltage: | 1200 V | Maximum Gate Emitter Voltage: | 20V | Maximum Power Dissipation: | 20 mW | Number of Transistors: | 7 | Configuration: | Hex | Package Type: | EasyPIM | Channel Type: | N | Pin Count: | 23 |
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| Andere zoekwoorden: Transistors, 2266059, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, FP25R12W2T7B11BPSA1 |
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