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| Artikelnr.:
2949E-2250579 Fabrikantnr.:
IPDQ60R010S7XTMA1 EAN/GTIN:
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| The Infineon IPDQ60R010S7 is the N channel power MOSFET and it enables the best performance for low frequency switching applications. The MOSFET is optimized for static switching and high current applications. It is an ideal fit for solid state relay and circuit breaker designs as well as for liner rectification inSMPS and inverter topologies.Minimizes conduction losses Increases energy efficiency More compact and easier designs Eliminates or reduces heat sinks in solid-state design Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 50 A | Maximum Drain Source Voltage: | 600 V | Package Type: | QDPAK | Series: | IPDQ60R010S7 | Mounting Type: | Surface Mount | Pin Count: | 22 | Maximum Drain Source Resistance: | 0.01 Ω | Maximum Gate Threshold Voltage: | 4.5V | Number of Elements per Chip: | 1 |
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| Andere zoekwoorden: 2250579, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IPDQ60R010S7XTMA1 |
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