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| Artikelnr.: 2949E-2224909 Fabrikantnr.: IPL60R065C7AUMA1 EAN/GTIN: geen gegevens |
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| The Infineon 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ∼50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.Reduced switching loss parameters such as Q G, C oss, E oss Best-in-class figure of merit Q G*R DS(on) Increased switching frequency Best R (on)*A in the world Rugged body diode Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 29 A | Maximum Drain Source Voltage: | 600 V | Package Type: | ThinPAK 8 x 8 | Series: | IPD50R | Mounting Type: | Surface Mount | Pin Count: | 5 | Maximum Drain Source Resistance: | 65 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4.5V | Number of Elements per Chip: | 1 | Transistor Material: | Si |
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| Andere zoekwoorden: 2224909, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IPL60R065C7AUMA1 |
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