|  |
| |
| Artikelnr.:
2949E-2224709 Fabrikantnr.:
IPSA70R1K4P7SAKMA1 EAN/GTIN:
geen gegevens |
| |
|
| | |
| The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.Product validation acc. JEDEC Standard Low switching losses (Eoss) Integrated ESD protection diode Excellent thermal behaviour Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 4 A | Maximum Drain Source Voltage: | 700 V | Package Type: | IPAK (TO-251) | Series: | CoolMOS | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.0014 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 3.5V | Number of Elements per Chip: | 1 | Transistor Material: | Silicon |
|
| | |
| | | |
| Andere zoekwoorden: 2224709, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IPSA70R1K4P7SAKMA1 |
| | |
| |