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Dual N-Channel MOSFET Transistor & Diode, 83 A, 650 V, 10-Pin DDPAK Infineon IPDD60R080G7XTMA1


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Productinformatie
Product Image
Product Image
Artikelnr.:
     2949E-2207418
Merk:
     Infineon
Fabrikantnr.:
     IPDD60R080G7XTMA1
EAN/GTIN:
     geen gegevens
Zoekwoorden:
Dual transistor
Dual-transistor
Dualtransistor
Power-transistor
The Infineon technologies introduces Double DPAK (DDPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom. The benefits of the already existing high voltage technology 600V Cool MOS G7 super junction (SJ) MOSFETis combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies.Gives best-in-class FOM RDS(on) x Eoss and RDS(on) x Qg Innovative top-side cooling concept Inbuilt 4th pin Kelvin source configuration and low parasitic source inductance TCOB capability of >> 2.000 cycles, MSL1 compliant and total Pb-free Enabling highest energy efficiency Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits Reduced parasitic source inductance improves e efficiency and ease-of-use Enables higher power density solutions Exceeding the highest quality standards
Meer informatie:
Channel Type:
N
Maximum Continuous Drain Current:
83 A
Maximum Drain Source Voltage:
650 V
Package Type:
DDPAK
Series:
C7 GOLD
Mounting Type:
Surface Mount
Pin Count:
10
Maximum Drain Source Resistance:
0.08 O
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4V
Number of Elements per Chip:
2
Andere zoekwoorden: PIN-diode, PIN-diodes, dual transistor, 2207418, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IPDD60R080G7XTMA1
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