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| Artikelnr.:
2949E-2207414 Fabrikantnr.:
IPD90N06S407ATMA2 EAN/GTIN:
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| The Infineon offers a wide range of 55V-60V N-channel automotive qualified power MOSFETs using the new OptiMOS technology in a variety of packages and ranging RDS(on) from 1.5mΩ up to 160mΩ.The new 60V automotive MOSFET family with OptiMOS5 technology delivers more power and leading performance. OptiMOS 5 provides reduced conduction losses optimized for drives and power conversion applications. The smaller leadless packages SSO8 (5x6mm2) and S3O8(3x3mm2) enable space savings by more than 50% compared to the area of a DPAK.N-channel - Enhancement mode MSL1 up to 260°C peak reflow 175°C operating temperature 100% Avalanche tested Ultra low RDSon worlds lowest RDS at 60V (on) highest current capability lowest switching and conduction power losses for highest thermal efficiency robust packages with superior quality and reliability Optimized total gate charge enables smaller driver output stages Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 90 A | Maximum Drain Source Voltage: | 60 V | Package Type: | TO-252 | Series: | OptiMOS | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.0069 O | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 20V | Number of Elements per Chip: | 1 |
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| Andere zoekwoorden: 2207414, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IPD90N06S407ATMA2 |
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