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| Artikelnr.:
2949E-2184339 Fabrikantnr.:
FF600R12KE4EBOSA1 EAN/GTIN:
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| The Infineon C series IGBT module with emitter controlled HE diode and fast TRENCHSTOP IGBT4. It has collector emitter voltage of 1200 V and collector current of 600 A. It is mainly used in motor control and drives, solutions for solar energy systems, UPS system and high power converters.Highest power density Flexibility Optimal electrical performance Highest reliability High creepage and clearance distances Meer informatie: | | Maximum Continuous Collector Current: | 600 A | Maximum Collector Emitter Voltage: | 1200 V | Maximum Gate Emitter Voltage: | 20V | Maximum Power Dissipation: | 20 mW | Number of Transistors: | 2 | Configuration: | Common Emitter | Package Type: | 62 mm | Channel Type: | N | Pin Count: | 7 | Transistor Configuration: | Common Emitter |
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| Andere zoekwoorden: Transistors, 2184339, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, FF600R12KE4EBOSA1 |
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