| |
|
| Artikelnr.: 2949E-2183060 Fabrikantnr.: IPG20N10S436AATMA1 EAN/GTIN: geen gegevens |
| |
|
| | |
| Channel Type = N Maximum Continuous Drain Current = 20 A Maximum Drain Source Voltage = 100 V Series = OptiMOS™ -T2 Mounting Type = Surface Mount Pin Count = 8 Maximum Drain Source Resistance = 0.036 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 3.5V Number of Elements per Chip = 2 Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 20 A | Maximum Drain Source Voltage: | 100 V | Package Type: | SuperSO8 5 x 6 Dual | Series: | OptiMOS™ -T2 | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 0.036 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 3.5V | Number of Elements per Chip: | 2 | Transistor Material: | Si |
|
| | |
| | | |
| Andere zoekwoorden: 2183060, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IPG20N10S436AATMA1 |
| | |
| |