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| Artikelnr.:
2949E-2183033 Fabrikantnr.:
IPB120N06S4H1ATMA2 EAN/GTIN:
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| The Infineon OptiMOS™-T2 series N-channel power MOSFET. It has low switching and conduction power losses for high thermal efficiency.N-channel - Enhancement mode 175°C operating temperature 100% Avalanche tested Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 120 A | Maximum Drain Source Voltage: | 60 V | Package Type: | D2PAK (TO-263) | Series: | OptiMOS™-T2 | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.002 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4V | Number of Elements per Chip: | 1 | Transistor Material: | Si |
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| Andere zoekwoorden: 2183033, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IPB120N06S4H1ATMA2 |
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