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| Artikelnr.:
2949E-2152596 Fabrikantnr.:
IRFR120ZTRPBF EAN/GTIN:
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| The Infineon HEXFET® Power MOSFET series utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead free Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 8.7 A | Maximum Drain Source Voltage: | 100 V | Package Type: | DPAK (TO-252) | Series: | HEXFET | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.19 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4V | Number of Elements per Chip: | 1 | Transistor Material: | Si |
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| Andere zoekwoorden: 2152596, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IRFR120ZTRPBF |
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