|  |
| |
| Artikelnr.:
2949E-2152589 Fabrikantnr.:
IRF8910TRPBF EAN/GTIN:
geen gegevens |
| |
|
| | |
| The Infineon HEXFET Power MOSFET has 20V maximum drain source voltage in a SO-8 package. It has application as dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box.Lead-Free Low RDS(on) Ultra-Low Gate Impedance Dual N-Channel MOSFET Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 10 A | Maximum Drain Source Voltage: | 20 V | Package Type: | SO-8 | Series: | HEXFET | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 0.0134 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2.55V | Number of Elements per Chip: | 1 | Transistor Material: | Si |
|
| | |
| | | |
| Andere zoekwoorden: 2152589, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IRF8910TRPBF |
| | |
| |