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| Artikelnr.:
2949E-2152578 Fabrikantnr.:
IRF6668TRPBF EAN/GTIN:
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| The Infineon HEXFET® Power MOSFET has 80V maximum drain source voltage in a DirectFET MZ package rated at 55 amperes optimized with low on resistance. The IRF6668PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.Lead-Free (Qualified up to 260°C Reflow) Ideal for High Performance Isolated Converter Primary Switch Socket Optimized for Synchronous Rectification Low Conduction Losses High Cdv/dt Immunity Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 55 A | Maximum Drain Source Voltage: | 80 V | Package Type: | DirectFET ISOMETRIC | Series: | HEXFET | Mounting Type: | Surface Mount | Pin Count: | 7 | Maximum Drain Source Resistance: | 0.015 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4.9V | Number of Elements per Chip: | 1 | Transistor Material: | Si |
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| Andere zoekwoorden: 2152578, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IRF6668TRPBF |
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