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| Artikelnr.:
2949E-2152572 Fabrikantnr.:
IRF1310NSTRLPBF EAN/GTIN:
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| The Infineon series fifth generation HEXFET from International rectifier utilize advanced processing techniques to achieve extremely low on resistance for Silicon area. This benefits, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET are well known for, providing sufficient level device for, provides designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2pack is a surface mount power package capable of accommodating die sizes upto HEX-4. It provide the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2pack is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.Advanced Process Technology Fully avalanche rated Fast switching Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 42 A | Maximum Drain Source Voltage: | 100 V | Package Type: | D2PAK (TO-263) | Series: | HEXFET | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.036 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4V | Number of Elements per Chip: | 1 | Transistor Material: | Si |
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| Andere zoekwoorden: 2152572, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IRF1310NSTRLPBF |
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