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| Artikelnr.:
2949E-2149000 Fabrikantnr.:
IPA60R280P7XKSA1 EAN/GTIN:
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| The Infineon CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g. very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses make switching applications even more efficient, more compact and much cooler.Excellent ESD robustness >2kV (HBM) for all products Suitable for hard and soft switching due to an outstanding commutation ruggedness Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 12 A | Maximum Drain Source Voltage: | 600 V | Package Type: | TO-220 FP | Series: | CoolMOS P7 | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.28 O | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4V | Number of Elements per Chip: | 1 | Transistor Material: | Si |
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| Andere zoekwoorden: 2149000, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IPA60R280P7XKSA1 |
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