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| Artikelnr.:
2949E-2105015 Fabrikantnr.:
SiSS52DN-T1-GE3 EAN/GTIN:
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| The Vishay N-Channel 30 V (D-S) MOSFET has PowerPAK 1212-8S package type.TrenchFET Gen V power MOSFET Very low RDS x Qg figure-of-merit (FOM) Enables higher power density with very low RDS(on) and thermally enhanced compact package 100 % Rg and UIS tested Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 162 A | Maximum Drain Source Voltage: | 30 V | Package Type: | PowerPAK 1212-8S | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 0.00095 Ω | Maximum Gate Threshold Voltage: | 1 → 2.2V | Number of Elements per Chip: | 1 |
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| Andere zoekwoorden: 2105015, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SiSS52DNT1GE3 |
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