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| Artikelnr.:
2949E-2047227 Fabrikantnr.:
SIHB17N80E-GE3 EAN/GTIN:
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| The Vishay E Series Power MOSFET has a low figure-of-merit (FOM) Ron x Qg and a low input capacitance (Ciss).Ultra low gate charge (Qg) Avalanche energy rated (UIS) Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 15 A | Maximum Drain Source Voltage: | 800 V | Package Type: | D2PAK (TO-263) | Series: | SiHB17N80E | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.29 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4V | Number of Elements per Chip: | 1 |
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| Andere zoekwoorden: 2047227, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SIHB17N80EGE3 |
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