|  |
| |
| Artikelnr.:
2949E-2043949 Fabrikantnr.:
SCT10N120H EAN/GTIN:
geen gegevens |
| |
|
| | |
| The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industry standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.Very tight variation of on-resistance vs. temperature Very high operating junction temperature capability (TJ = 200°C) Very fast and robust intrinsic body diode Low capacitance Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 12 A | Maximum Drain Source Voltage: | 1200 V | Package Type: | HiP247 | Series: | SCT10N120H | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.52 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 3.5V | Number of Elements per Chip: | 1 | Transistor Material: | SiC |
|
| | |
| | | |
| Andere zoekwoorden: 2043949, Semiconductors, Discrete Semiconductors, MOSFETs, STMicroelectronics, SCT10N120H |
| | |
| |