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| Artikelnr.: 2949E-2025555 Fabrikantnr.: STWA70N65DM6 EAN/GTIN: geen gegevens |
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| The STMicroelectronics N-channel Power MOSFET is part of the MDmesh™ DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market.100% avalanche tested Zener-protected Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 68 A | Maximum Drain Source Voltage: | 650 V | Package Type: | TO-247 | Series: | ST | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.036 Ω | Channel Mode: | Depletion | Maximum Gate Threshold Voltage: | 4.75V | Number of Elements per Chip: | 1 | Transistor Material: | SiC |
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| Andere zoekwoorden: 2025555, Semiconductors, Discrete Semiconductors, MOSFETs, STMicroelectronics, STWA70N65DM6 |
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