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| Artikelnr.: 2949E-1952669 Fabrikantnr.: NVMFD6H840NLT1G EAN/GTIN: geen gegevens |
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| Channel Type = N Maximum Continuous Drain Current = 74 A Maximum Drain Source Voltage = 80 V Package Type = DFN Mounting Type = Surface Mount Pin Count = 8 Maximum Drain Source Resistance = 8.8 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2V Minimum Gate Threshold Voltage = 1.2V Maximum Power Dissipation = 3.1 W Transistor Configuration = Dual Maximum Gate Source Voltage = ±20 V Maximum Operating Temperature = +175 °Cmm Forward Diode Voltage = 1.2V Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 74 A | Maximum Drain Source Voltage: | 80 V | Package Type: | DFN | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 8.8 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2V | Minimum Gate Threshold Voltage: | 1.2V | Maximum Power Dissipation: | 3.1 W | Transistor Configuration: | Dual | Maximum Gate Source Voltage: | ±20 V | Length: | 6.1mm | Maximum Operating Temperature: | +175 °C |
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| Andere zoekwoorden: 1952669, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, NVMFD6H840NLT1G |
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