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| Artikelnr.:
2949E-1952666 Fabrikantnr.:
NVB190N65S3F EAN/GTIN:
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| SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.700 V @ TJ = 150°C Higher system reliability at low temperature operation Ultra Low Gate Charge (Typ. Qg = 34 nC) Lower switching loss Low Effective Output Capacitance (Typ. Coss(eff.) = 314 pF) Lower switching loss PPAP Capable Typ. RDS(on) = 158 mΩ Application HV DC/DC converter Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 20 A | Maximum Drain Source Voltage: | 650 V | Package Type: | D2PAK (TO-263) | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 190 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 5V | Minimum Gate Threshold Voltage: | 3V | Maximum Power Dissipation: | 162 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±30 V | Length: | 10.67mm | Maximum Operating Temperature: | +150 °C |
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| Andere zoekwoorden: 1952666, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, NVB190N65S3F |
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