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| Artikelnr.:
2949E-1952556 Fabrikantnr.:
NVMFD6H852NLWFT1G EAN/GTIN:
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| Channel Type = N
Maximum Continuous Drain Current = 25 A
Maximum Drain Source Voltage = 80 V
Package Type = DFN
Mounting Type = Surface Mount
Pin Count = 8
Maximum Drain Source Resistance = 31.5 mΩ
Channel Mode = Enhancement
Maximum Gate Threshold Voltage = 2V
Minimum Gate Threshold Voltage = 1.2V
Maximum Power Dissipation = 3.2 W
Transistor Configuration = Dual
Maximum Gate Source Voltage = ±20 V
Maximum Operating Temperature = +175 °C
Height = 1.05mm Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 25 A | Maximum Drain Source Voltage: | 80 V | Package Type: | DFN | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 31.5 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2V | Minimum Gate Threshold Voltage: | 1.2V | Maximum Power Dissipation: | 3.2 W | Transistor Configuration: | Dual | Maximum Gate Source Voltage: | ±20 V | Length: | 6.1mm | Maximum Operating Temperature: | +175 °C |
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| Andere zoekwoorden: 1952556, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, NVMFD6H852NLWFT1G |
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