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| Artikelnr.:
2949E-1952509 Fabrikantnr.:
NVMJS1D5N04CLTWG EAN/GTIN:
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| Automotive Power MOSFET in a 5x6mm flat lead, dual cool package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses LFPAK8 Package, Industry Standard PPAP Capable These Devices are Pb−Free Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 200 A | Maximum Drain Source Voltage: | 40 V | Package Type: | LFPAK8 | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 2.2 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2V | Minimum Gate Threshold Voltage: | 1.2V | Maximum Power Dissipation: | 110 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±20 V | Length: | 5mm | Maximum Operating Temperature: | +175 °C |
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| Andere zoekwoorden: 1952509, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, NVMJS1D5N04CLTWG |
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