N-Channel MOSFET, 115 A, 300 V, 4-Pin SOT-227 IXYS IXFN140N30P

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Productinformatie

Artikelnr.:
2949E-193739

Merk:
IXYS

Fabrikantnr.:
IXFN140N30P

EAN/GTIN:
5059041194877

Zoekwoorden:

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series. N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

Meer informatie:


Channel Type:	N
Maximum Continuous Drain Current:	115 A
Maximum Drain Source Voltage:	300 V
Package Type:	SOT-227
Series:	HiperFET, Polar
Mounting Type:	Screw Mount
Pin Count:	4
Maximum Drain Source Resistance:	24 mΩ
Channel Mode:	Enhancement
Maximum Gate Threshold Voltage:	5V
Maximum Power Dissipation:	700 W
Transistor Configuration:	Single
Maximum Gate Source Voltage:	-20 V, +20 V
Length:	38.2mm
Maximum Operating Temperature:	+150 °C

Andere zoekwoorden: 193739, Semiconductors, Discrete Semiconductors, MOSFETs, IXYS, IXFN140N30P

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