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| Artikelnr.:
2949E-1923492 Fabrikantnr.:
C3M0120090J EAN/GTIN:
5059045430940 |
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| Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 900-V MOSFET platform. Optimized for high-frequency power electronics applications, including renewable-energy inverters, electric-vehicle charging systems, and three-phase industrial power supplies, the new 900-V platform enables smaller and higher-efficiency next-generation power conversion systems at cost parity with silicon-based solutions.New low-impedance package with driver source High-speed switching with low capacitances High blocking voltage with low RDS(on) Avalanche ruggedness Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 22 A | Maximum Drain Source Voltage: | 900 V | Package Type: | TO-263-7 | Mounting Type: | Surface Mount | Pin Count: | 7 | Maximum Drain Source Resistance: | 120 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 3.5V | Minimum Gate Threshold Voltage: | 1.8V | Maximum Power Dissipation: | 83 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -8 V, 18 V | Length: | 10.23mm | Maximum Operating Temperature: | +150 °C |
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| Andere zoekwoorden: MOSFET, MOSFET-transistor, 1923492, Semiconductors, Discrete Semiconductors, MOSFETs, Wolfspeed, C3M0120090J |
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