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| Artikelnr.:
2949E-1890419 Fabrikantnr.:
NVHL080N120SC1 EAN/GTIN:
5059045836377 |
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| Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.1200V rated Max RDS(on) = 110mΩ at Vgs = 20V, Id = 20A High Speed Switching and Low Capacitance Devices are Pb-Free Applications PFC OBC End Products Automotive DC/DC converter for EV/PHEV Automotive On Board Charger Automotive Auxiliary Motor Drive Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 44 A | Maximum Drain Source Voltage: | 1200 V | Package Type: | TO-247 | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 162 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4.3V | Minimum Gate Threshold Voltage: | 1.8V | Maximum Power Dissipation: | 348 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -15 V, +25 V | Length: | 15.87mm | Maximum Operating Temperature: | +175 °C |
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| Andere zoekwoorden: 1890419, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, NVHL080N120SC1 |
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