onsemi 100V 2A, Schottky Diode, 2-Pin DO-41 MBR1100GOS

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifiers state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes and polarity protection diodes.Low Reverse Current Low Stored Charge, Majority Carrier Conduction Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction Guard-Ring for Stress Protection Low Forward Voltage 150°C Operating Junction Temperature High Surge Capacity Mechanical Characteristics: Case: Epoxy, Moulded Weight: 0.4 gram (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily solder able Lead Temperature for Soldering Purposes: 260°C Max. For 10 Seconds Shipped in plastic bags, 1000 per bag Polarity: Cathode Indicated by Polarity Band Marking: B1100 These are Pb-Free Devices